IRLL2705TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

55V

Rds On (Max) @ Id, Vgs :

40m Ω @ 3.8A, 10V

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

55V

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.051Ohm

Vgs(th) (Max) @ Id :

2V @ 250μA

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G4

Pulsed Drain Current-Max (IDM) :

30A

Published :

1999

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

110 mJ

Series :

HEXFET®

Configuration :

Single

Number of Elements :

1

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-261-4, TO-261AA

Number of Terminations :

4

Drain Current-Max (Abs) (ID) :

5.2A

Additional Feature :

LOGIC LEVEL COMPATIBLE