IRLL2705PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

40m Ω @ 3.8A, 10V

Number of Elements :

1

Number of Terminations :

4

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.051Ohm

Surface Mount :

yes

Power Dissipation-Max :

1W Ta

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

55V

JESD-30 Code :

R-PDSO-G4

Operating Mode :

ENHANCEMENT MODE

Published :

1997

Package / Case :

TO-261-4, TO-261AA

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Drain Current-Max (Abs) (ID) :

5.2A

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

Single

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

30A

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Series :

HEXFET®

Vgs (Max) :

±16V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Avalanche Energy Rating (Eas) :

110 mJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2V @ 250μA