IRLL2703TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-261-4, TO-261AA

JESD-30 Code :

R-PDSO-G4

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Number of Terminations :

4

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

ECCN Code :

EAR99

Width :

3.7mm

FET Type :

N-Channel

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Height :

1.4478mm

Rise Time :

24ns

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.9A, 10V

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Element Configuration :

Single

Forward Voltage :

1V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

6.9 ns

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Voltage - Rated DC :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Continuous Drain Current (ID) :

3.9A

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Current Rating :

3.9A

Published :

1999

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Vgs (Max) :

±16V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

7.4 ns

Terminal Position :

Dual

Power Dissipation :

2.1W

Pulsed Drain Current-Max (IDM) :

16A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Gate to Source Voltage (Vgs) :

16V

Resistance :

60mOhm

Fall Time (Typ) :

14 ns

Power Dissipation-Max :

1W Ta

Avalanche Energy Rating (Eas) :

180 mJ

Length :

6.6802mm