IRLL2703PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-261-4, TO-261AA

Height :

1.7mm

Threshold Voltage :

2.4V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.1W

Drain to Source Breakdown Voltage :

30V

Voltage - Rated DC :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

REACH SVHC :

No SVHC

Element Configuration :

Single

Rds On Max :

45 mΩ

Length :

6.7mm

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Dual Supply Voltage :

30V

Turn On Delay Time :

7.4 ns

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±16V

Nominal Vgs :

2.4 V

FET Type :

N-Channel

Width :

3.7mm

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Lead Free :

Lead Free

Input Capacitance :

530pF

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

45mOhm @ 3.9A, 10V

Resistance :

60mOhm

Turn-Off Delay Time :

6.9 ns

Published :

2004

Power Dissipation-Max :

1W Ta

Max Operating Temperature :

150°C

Current Rating :

3.9A

Radiation Hardening :

No

Recovery Time :

63 ns

Supplier Device Package :

SOT-223

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

3.9A

Number of Pins :

3

Drain to Source Resistance :

70mOhm

Fall Time (Typ) :

14 ns

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Rise Time :

24ns

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Series :

HEXFET®

Mounting Type :

Surface Mount

Number of Elements :

1