IRLL2703

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Avalanche Energy Rating (Eas) :

180 mJ

Power Dissipation-Max :

1W Ta

JESD-30 Code :

R-PDSO-G4

Mounting Type :

Surface Mount

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Qualification Status :

Not Qualified

FET Type :

N-Channel

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

16A

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.045Ohm

Series :

HEXFET®

Number of Terminations :

4

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Peak Reflow Temperature (Cel) :

245

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±16V

Terminal Finish :

Tin/Lead (Sn/Pb)

Package / Case :

TO-261-4, TO-261AA

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.9A, 10V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Packaging :

Tube

Published :

1999

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain Current-Max (Abs) (ID) :

5.5A

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Number of Elements :

1

Case Connection :

DRAIN