IRLL110
- Mfr.Part #
- IRLL110
- Manufacturer
- Vishay
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 1.5A SOT223
- Stock
- 11,500
- In Stock :
- 11,500
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Tc
- Fall Time (Typ) :
- 18 ns
- Gate to Source Voltage (Vgs) :
- 10V
- Vgs (Max) :
- ±10V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Turn-Off Delay Time :
- 16 ns
- Weight :
- 250.212891mg
- Supplier Device Package :
- SOT-223
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 2017
- Width :
- 3.7mm
- Turn On Delay Time :
- 9.3 ns
- Resistance :
- 540mOhm
- Drain to Source Voltage (Vdss) :
- 100V
- Power Dissipation-Max :
- 2W Ta 3.1W Tc
- Min Operating Temperature :
- -55°C
- Rise Time :
- 47ns
- Rds On Max :
- 540 mΩ
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 6.1nC @ 5V
- Drain to Source Resistance :
- 540mOhm
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 900mA, 5V
- Number of Pins :
- 4
- Length :
- 6.7mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Number of Elements :
- 1
- Height :
- 1.45mm
- Input Capacitance :
- 250pF
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Power Dissipation :
- 2W
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Continuous Drain Current (ID) :
- 1.5A
- Datasheets
- IRLL110

N-Channel Tube 540mOhm @ 900mA, 5V ±10V 250pF @ 25V 6.1nC @ 5V 100V TO-261-4, TO-261AA
IRLL110 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.5A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 16 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 540mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9.3 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 10V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (4V 5V), this device helps reduce its overall power consumption.
IRLL110 Features
a continuous drain current (ID) of 1.5A
the turn-off delay time is 16 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRLL110 Applications
There are a lot of Vishay Siliconix
IRLL110 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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