IRLL024ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Rise Time :

33ns

Drain to Source Breakdown Voltage :

55V

Turn On Delay Time :

8.6 ns

Fall Time (Typ) :

15 ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

60m Ω @ 3A, 10V

Width :

3.7mm

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G4

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Resistance :

60mOhm

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Length :

6.6802mm

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

Continuous Drain Current (ID) :

5A

Gate to Source Voltage (Vgs) :

16V

Pulsed Drain Current-Max (IDM) :

40A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Height :

1.4478mm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-261-4, TO-261AA

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Vgs (Max) :

±16V

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drain Current-Max (Abs) (ID) :

5A

Terminal Position :

Dual

Power Dissipation :

2.8W

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

20 ns

ECCN Code :

EAR99

Number of Terminations :

4

Number of Elements :

1

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Power Dissipation-Max :

1W Ta