IRL640STRRPBF
- Mfr.Part #
- IRL640STRRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 17A D2PAK
- Stock
- 22,342
- In Stock :
- 22,342
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Vgs (Max) :
- ±10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Turn On Delay Time :
- 8 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Fall Time (Typ) :
- 52 ns
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Published :
- 2015
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 10A, 5V
- Number of Elements :
- 1
- Drain to Source Resistance :
- 180mOhm
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- Power Dissipation :
- 3.1W
- Input Capacitance :
- 1.8nF
- Turn-Off Delay Time :
- 44 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 9.65mm
- Max Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 5V
- Length :
- 10.67mm
- Gate to Source Voltage (Vgs) :
- 10V
- Continuous Drain Current (ID) :
- 17A
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Resistance :
- 180mOhm
- Drain to Source Voltage (Vdss) :
- 200V
- Rise Time :
- 83ns
- Lead Free :
- Lead Free
- Supplier Device Package :
- D2PAK
- FET Type :
- N-Channel
- Rds On Max :
- 180 mΩ
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins :
- 3
- Height :
- 4.83mm
- Number of Channels :
- 1
- Weight :
- 1.437803g
- Datasheets
- IRL640STRRPBF
N-Channel Tape & Reel (TR) 180mOhm @ 10A, 5V ±10V 1800pF @ 25V 66nC @ 5V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL640STRRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1800pF @ 25V.This device conducts a continuous drain current (ID) of 17A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 44 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 180mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRL640STRRPBF Features
a continuous drain current (ID) of 17A
the turn-off delay time is 44 ns
single MOSFETs transistor is 180mOhm
a 200V drain to source voltage (Vdss)
IRL640STRRPBF Applications
There are a lot of Vishay Siliconix
IRL640STRRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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