IRL640STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±10V

Power Dissipation-Max :

3.1W Ta 125W Tc

Fall Time (Typ) :

52 ns

Length :

10.67mm

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Drain to Source Breakdown Voltage :

200V

Gate to Source Voltage (Vgs) :

10V

Input Capacitance :

4.39nF

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

180mOhm @ 10A, 5V

Mount :

Surface Mount

Contact Plating :

Tin

Current :

17A

Turn-Off Delay Time :

44 ns

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 5V

Supplier Device Package :

D2PAK

Turn On Delay Time :

8 ns

Radiation Hardening :

No

Height :

4.83mm

Max Operating Temperature :

150°C

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

200V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Power Dissipation :

3.1W

Drain to Source Resistance :

180mOhm

Voltage :

200V

Published :

2015

Mounting Type :

Surface Mount

Number of Channels :

1

Rds On Max :

2.7 mΩ

RoHS Status :

ROHS3 Compliant

Rise Time :

83ns

Width :

9.65mm

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

17A

Resistance :

180mOhm

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Min Operating Temperature :

-55°C

Number of Pins :

3

FET Type :

N-Channel

Weight :

1.437803g

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB