IRL640A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Threshold Voltage :

2V

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

64 mJ

Published :

2013

FET Type :

N-Channel

Weight :

1.8g

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

5V

Nominal Vgs :

2 V

Package / Case :

TO-220-3

Rise Time :

8ns

Rds On (Max) @ Id, Vgs :

180m Ω @ 9A, 5V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V

Resistance :

180mOhm

Power Dissipation-Max :

110W Tc

Length :

10.67mm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

200V

Factory Lead Time :

8 Weeks

Packaging :

Tube

Height :

16.3mm

Current Rating :

18A

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1705pF @ 25V

Power Dissipation :

110W

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Continuous Drain Current (ID) :

18A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

46 ns

Fall Time (Typ) :

15 ns

Mount :

Through Hole

Voltage - Rated DC :

200V

Width :

4.7mm

Turn On Delay Time :

11 ns

Number of Elements :

1

ECCN Code :

EAR99

Element Configuration :

Single

Radiation Hardening :

No

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

REACH SVHC :

No SVHC