IRL640

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Pins :

3

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transistor Element Material :

SILICON

Weight :

1.8g

Drive Voltage (Max Rds On,Min Rds On) :

5V

Height :

16.3mm

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Rise Time :

8ns

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Radiation Hardening :

No

Published :

2013

Power Dissipation-Max :

110W Tc

FET Type :

N-Channel

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1705pF @ 25V

Nominal Vgs :

2 V

Length :

10.67mm

Continuous Drain Current (ID) :

18A

Resistance :

180mOhm

Turn-Off Delay Time :

46 ns

Mount :

Through Hole

Vgs(th) (Max) @ Id :

2V @ 250μA

Element Configuration :

Single

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

200V

Current Rating :

18A

Factory Lead Time :

8 Weeks

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Turn On Delay Time :

11 ns

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

64 mJ

Fall Time (Typ) :

15 ns

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

200V

Power Dissipation :

110W

Number of Terminations :

3

Width :

4.7mm

Transistor Application :

SWITCHING

Threshold Voltage :

2V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

180m Ω @ 9A, 5V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V