IRL6342TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1025pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

15 Weeks

Turn On Delay Time :

6 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

12ns

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Lead Free :

Lead Free

Power Dissipation-Max :

2.5W Ta

Terminal Position :

Dual

Power Dissipation :

2.5W

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Number of Elements :

1

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

9.9A Ta

Rds On (Max) @ Id, Vgs :

14.6m Ω @ 9.9A, 4.5V

Threshold Voltage :

1.1V

Configuration :

SINGLE WITH BUILT-IN DIODE

Resistance :

14.6mOhm

Mount :

Surface Mount

Radiation Hardening :

No

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Turn-Off Delay Time :

33 ns

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

79A

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Published :

2011

Nominal Vgs :

1.1 V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

9.9A

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Pins :

8

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

14 ns

Packaging :

Tape and Reel (TR)