IRL6342PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Recovery Time :

20 ns

Fall Time (Typ) :

14 ns

Current - Continuous Drain (Id) @ 25°C :

9.9A Ta

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

79A

FET Type :

N-Channel

Terminal Position :

Dual

Mount :

Surface Mount

Power Dissipation :

2.5W

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Element Configuration :

Single

Turn-Off Delay Time :

33 ns

Nominal Vgs :

1.1 V

Threshold Voltage :

1.1V

Length :

5mm

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4mm

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

6 ns

Published :

2003

ECCN Code :

EAR99

Packaging :

Tube

Continuous Drain Current (ID) :

9.9A

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

Rise Time :

12ns

Power Dissipation-Max :

2.5W Ta

Rds On (Max) @ Id, Vgs :

14.6m Ω @ 9.9A, 4.5V

Number of Pins :

8

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Height :

1.75mm

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1025pF @ 25V

Max Junction Temperature (Tj) :

150°C

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

REACH SVHC :

No SVHC