IRL630STRRPBF
- Mfr.Part #
- IRL630STRRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 9A D2PAK
- Stock
- 5,490
- In Stock :
- 5,490
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 400 mΩ
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 3.1W
- Rise Time :
- 57ns
- Resistance :
- 400mOhm
- Turn On Delay Time :
- 8 ns
- Fall Time (Typ) :
- 33 ns
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Supplier Device Package :
- D2PAK
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 5.4A, 5V
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Height :
- 4.83mm
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Gate to Source Voltage (Vgs) :
- 10V
- Continuous Drain Current (ID) :
- 9A
- Width :
- 9.65mm
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 3.1W Ta 74W Tc
- Published :
- 2013
- Input Capacitance :
- 1.1nF
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Drain to Source Resistance :
- 400mOhm
- Vgs (Max) :
- ±10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- Weight :
- 1.437803g
- Turn-Off Delay Time :
- 38 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 200V
- Length :
- 10.67mm
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Datasheets
- IRL630STRRPBF
N-Channel Tape & Reel (TR) 400mOhm @ 5.4A, 5V ±10V 1100pF @ 25V 40nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL630STRRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.This device has a drain-to-source resistance of 400mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 10V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (4V 5V), this device contributes to a reduction in overall power consumption.
IRL630STRRPBF Features
a continuous drain current (ID) of 9A
the turn-off delay time is 38 ns
single MOSFETs transistor is 400mOhm
a 200V drain to source voltage (Vdss)
IRL630STRRPBF Applications
There are a lot of Vishay Siliconix
IRL630STRRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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