IRL630SPBF
- Mfr.Part #
- IRL630SPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 9A D2PAK
- Stock
- 3,088
- In Stock :
- 3,088
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 8 ns
- Weight :
- 1.437803g
- Max Operating Temperature :
- 150°C
- Rise Time :
- 57ns
- FET Type :
- N-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Resistance :
- 400mOhm
- Mount :
- Surface Mount
- Number of Channels :
- 1
- Input Capacitance :
- 1.1nF
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Factory Lead Time :
- 8 Weeks
- Length :
- 10.67mm
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 9A
- Gate to Source Voltage (Vgs) :
- 10V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 3.1W Ta 74W Tc
- Published :
- 2011
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 400mOhm
- Supplier Device Package :
- D2PAK
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 400 mΩ
- Element Configuration :
- Single
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 200V
- Vgs (Max) :
- ±10V
- Turn-Off Delay Time :
- 38 ns
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 5.4A, 5V
- Recovery Time :
- 340 ns
- Min Operating Temperature :
- -55°C
- Packaging :
- Tube
- Width :
- 9.65mm
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Power Dissipation :
- 3.1W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Height :
- 4.83mm
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 33 ns
- Datasheets
- IRL630SPBF
N-Channel Tube 400mOhm @ 5.4A, 5V ±10V 1100pF @ 25V 40nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL630SPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1100pF @ 25V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 400mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRL630SPBF Features
a continuous drain current (ID) of 9A
the turn-off delay time is 38 ns
single MOSFETs transistor is 400mOhm
a 200V drain to source voltage (Vdss)
IRL630SPBF Applications
There are a lot of Vishay Siliconix
IRL630SPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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