IRL630
- Mfr.Part #
- IRL630
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 9A TO220AB
- Stock
- 4,861
- In Stock :
- 4,861
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.41mm
- Radiation Hardening :
- No
- Vgs (Max) :
- ±10V
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 200V
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 5.4A, 5V
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Weight :
- 6.000006g
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 10V
- Rise Time :
- 57ns
- Drain to Source Resistance :
- 400mOhm
- Turn-Off Delay Time :
- 38 ns
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 1.1nF
- Width :
- 4.7mm
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Height :
- 9.01mm
- Supplier Device Package :
- TO-220AB
- Drain to Source Voltage (Vdss) :
- 200V
- Max Operating Temperature :
- 150°C
- Continuous Drain Current (ID) :
- 9A
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55°C
- Rds On Max :
- 400 mΩ
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Tube
- Fall Time (Typ) :
- 33 ns
- Mount :
- Through Hole
- Power Dissipation-Max :
- 74W Tc
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Package / Case :
- TO-220-3
- Published :
- 2011
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 8 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Datasheets
- IRL630
N-Channel Tube 400mOhm @ 5.4A, 5V ±10V 1100pF @ 25V 40nC @ 10V 200V TO-220-3
IRL630 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.This device has a drain-to-source resistance of 400mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 10V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (4V 5V), this device contributes to a reduction in overall power consumption.
IRL630 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 400mOhm
a 200V drain to source voltage (Vdss)
IRL630 Applications
There are a lot of Vishay Siliconix
IRL630 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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