IRGPS66160DPBF

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Mfr.Part #
IRGPS66160DPBF
Manufacturer
Infineon Technologies
Package / Case
TO-274AA
Datasheet
Download
Description
IGBT 600V 160A TO247
Stock
3,941
In Stock :
3,941

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Collector Emitter Saturation Voltage :
1.65V
Length :
16.1mm
Width :
5.5mm
Switching Energy :
4.47mJ (on), 3.43mJ (off)
Collector Emitter Voltage (VCEO) :
1.95V
Vce(on) (Max) @ Vge, Ic :
1.95V @ 15V, 120A
Case Connection :
COLLECTOR
Mounting Type :
Through Hole
Power - Max :
750W
Factory Lead Time :
19 Weeks
Number of Elements :
1
Max Power Dissipation :
750W
Mount :
Through Hole
Td (on/off) @ 25°C :
80ns/190ns
Reverse Recovery Time :
95 ns
Height :
20.8mm
Collector Emitter Breakdown Voltage :
600V
JESD-30 Code :
R-PSIP-T3
Lead Free :
Lead Free
Current - Collector Pulsed (Icm) :
360A
Published :
2014
Gate Charge :
220nC
Packaging :
Tube
RoHS Status :
RoHS Compliant
Turn Off Time-Nom (toff) :
350 ns
Operating Temperature :
-40°C~175°C TJ
Number of Pins :
247
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Test Condition :
400V, 120A, 4.7 Ω, 15V
Input Type :
Standard
Turn On Time :
210 ns
Package / Case :
TO-274AA
Transistor Application :
POWER CONTROL
Polarity/Channel Type :
N-Channel
ECCN Code :
EAR99
Max Collector Current :
240A
Number of Terminations :
3
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IRGPS66160DPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGPS66160DPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-40°C~175°C TJ, Number of Pins:247, Package / Case:TO-274AA, Number of Terminations:3, IRGPS66160DPBF pinout, IRGPS66160DPBF datasheet PDF, IRGPS66160DPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGPS66160DPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGPS66160DPBF


IRGPS66160DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGPS66160DPBF Description

The IRGP4660DPBF IGBTs feature a high switching frequency, a maximum junction temperature of 175°C, and low EMI for improved reliability, higher system efficiency, and rugged transient performance.

IRGPS66160DPBF Llewellyn Vaughan-Edmunds, IGBT Product Marketing Manager, IR's Energy Saving Products Business Unit, said, "IGBTs provide a tough, reliable alternative for designers aiming to maximize performance in welding applications."


IRGPS66160DPBF Features

  • Low VCE(ON) and switching losses

  • Optimized diode for full-bridge hard switch converters

  • Square RBSOA and maximum junction temperature 175°C

  • 5μs short circuit SOA

  • Positive VCE(ON) temperature coefficient

  • Lead-free, RoHS compliant


IRGPS66160DPBF Applications

  • Welding

  • H Bridge Converters

  • Microwave Oven

  • Large Solenoids

  • Tesla Coils

  • Induction Heating

  • Converters or Inverter circuits



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