IRGPS60B120KDP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Width :

5.5mm

Input Type :

Standard

Voltage - Rated DC :

1.2kV

Gate Charge :

340nC

Fall Time-Max (tf) :

58ns

Turn On Delay Time :

72 ns

Mount :

Through Hole

Test Condition :

600V, 15A, 4.7 Ω, 15V

Number of Elements :

1

Max Power Dissipation :

595W

Length :

16.1mm

Transistor Element Material :

SILICON

Number of Terminations :

3

ECCN Code :

EAR99

Power Dissipation :

595W

Case Connection :

COLLECTOR

Vce(on) (Max) @ Vge, Ic :

2.75V @ 15V, 60A

Max Collector Current :

105A

Rise Time :

32ns

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Turn-Off Delay Time :

366 ns

Transistor Application :

Motor Control

Voltage - Collector Emitter Breakdown (Max) :

1200V

Lead Free :

Lead Free

Switching Energy :

3.21mJ (on), 4.78mJ (off)

RoHS Status :

ROHS3 Compliant

Turn Off Time-Nom (toff) :

411 ns

Collector Emitter Voltage (VCEO) :

1.2kV

Package / Case :

TO-274AA

Collector Emitter Saturation Voltage :

2.5V

Published :

2004

Mounting Type :

Through Hole

Element Configuration :

Single

Turn On Time :

104 ns

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

240A

Packaging :

Tube

Gate-Emitter Voltage-Max :

20V

Height :

25.05mm

Reverse Recovery Time :

180 ns

Factory Lead Time :

13 Weeks

Collector Emitter Breakdown Voltage :

1.2kV

IGBT Type :

NPT

Number of Pins :

3

REACH SVHC :

No SVHC

Current Rating :

105A

Gate-Emitter Thr Voltage-Max :

6V

Continuous Collector Current :

105A