IRGPS40B120UPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Turn On Delay Time :

76 ns

Mount :

Through Hole

Voltage - Rated DC :

1.2kV

Lead Free :

Lead Free

IGBT Type :

NPT

Test Condition :

600V, 40A, 4.7 Ω, 15V

Power Dissipation :

595W

Turn-Off Delay Time :

332 ns

Collector Emitter Voltage (VCEO) :

3.71V

REACH SVHC :

No SVHC

Packaging :

Bulk

Max Power Dissipation :

595W

Input Type :

Standard

Factory Lead Time :

13 Weeks

Number of Terminations :

3

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

3.5V

Transistor Element Material :

SILICON

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

3.71V @ 15V, 50A

RoHS Status :

RoHS Compliant

Rise Time :

25ns

Polarity/Channel Type :

N-Channel

Voltage - Collector Emitter Breakdown (Max) :

1200V

Element Configuration :

Single

Number of Elements :

1

Published :

2005

Length :

15.6mm

Current - Collector Pulsed (Icm) :

160A

Collector Emitter Breakdown Voltage :

1.2kV

Turn On Time :

115 ns

Switching Energy :

1.4mJ (on), 1.65mJ (off)

Height :

20.3mm

Max Collector Current :

80A

Turn Off Time-Nom (toff) :

357 ns

Case Connection :

COLLECTOR

Width :

5mm

Current Rating :

80A

Package / Case :

TO-274AA

Termination :

Through Hole

Transistor Application :

Motor Control

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

340nC