IRGP6690D-EPBF

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Mfr.Part #
IRGP6690D-EPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 90A TO247AD
Stock
41,511
In Stock :
41,511

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Test Condition :
400V, 75A, 10 Ω, 15V
Factory Lead Time :
14 Weeks
Power - Max :
483W
Input Type :
Standard
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Breakdown Voltage :
600V
Element Configuration :
Single
Packaging :
Tube
Max Collector Current :
140A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Pulsed (Icm) :
225A
Weight :
6.500007g
Switching Energy :
2.4mJ (on), 2.2mJ (off)
Reverse Recovery Time :
90 ns
Collector Emitter Voltage (VCEO) :
1.95V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2014
Td (on/off) @ 25°C :
85ns/222ns
Lead Free :
Lead Free
ECCN Code :
EAR99
Operating Temperature :
-40°C~175°C TJ
Mount :
Through Hole
Max Power Dissipation :
483W
Package / Case :
TO-247-3
RoHS Status :
RoHS Compliant
Number of Pins :
3
Vce(on) (Max) @ Vge, Ic :
1.95V @ 15V, 75A
Gate Charge :
140nC
Collector Emitter Saturation Voltage :
1.65V
Mounting Type :
Through Hole
Datasheets
IRGP6690D-EPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGP6690D-EPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~175°C TJ, Package / Case:TO-247-3, Number of Pins:3, Mounting Type:Through Hole, IRGP6690D-EPBF pinout, IRGP6690D-EPBF datasheet PDF, IRGP6690D-EPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGP6690D-EPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGP6690D-EPBF


IRGP6690D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP6690D-EPBF Description

 

IRGP6690D-EPBF transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGP6690D-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGP6690D-EPBF has the common source configuration.

 

 

IRGP6690D-EPBF Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRGP6690D-EPBF Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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