IRGP6660DPBF

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Mfr.Part #
IRGP6660DPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 95A 330W TO247AC
Stock
5
In Stock :
5

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Length :
15.87mm
Collector Emitter Breakdown Voltage :
600V
Test Condition :
400V, 48A, 10 Ω, 15V
Input Type :
Standard
Reverse Recovery Time :
70 ns
Collector Emitter Voltage (VCEO) :
1.95V
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Gate Charge :
95nC
REACH SVHC :
No SVHC
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vce(on) (Max) @ Vge, Ic :
1.95V @ 15V, 48A
Operating Temperature :
-40°C~175°C TJ
Switching Energy :
600μJ (on), 1.3mJ (off)
Td (on/off) @ 25°C :
60ns/155ns
Packaging :
Tube
Package / Case :
TO-247-3
Current - Collector Pulsed (Icm) :
144A
Width :
5.31mm
Max Power Dissipation :
330W
Height :
20.7mm
Power - Max :
330W
Mount :
Through Hole
Max Collector Current :
95A
ECCN Code :
EAR99
Published :
2006
Element Configuration :
Single
Collector Emitter Saturation Voltage :
1.65V
Datasheets
IRGP6660DPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGP6660DPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-40°C~175°C TJ, Package / Case:TO-247-3, IRGP6660DPBF pinout, IRGP6660DPBF datasheet PDF, IRGP6660DPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGP6660DPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGP6660DPBF


IRGP6660DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP6660DPBF             Description

 

The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.



IRGP6660DPBF               Applications

? Welding

? H Bridge Converters

 

IRGP6660DPBF                        Features

Low VcEon)and switching losses

Optimized diode for full bridge hard switch converters

Square RBSOA and maximum junction temperature 175 ° C

5us short circuit SOA

Positive VCE(ON)temperature coefficient Lead-free.RoHS compliant

 


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