IRGP6650D-EPBF

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Mfr.Part #
IRGP6650D-EPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 50A TO247AD
Stock
38,829
In Stock :
38,829

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Current - Collector Pulsed (Icm) :
105A
Vce(on) (Max) @ Vge, Ic :
1.95V @ 15V, 35A
Gate Charge :
75nC
Power - Max :
306W
Published :
2014
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Voltage (VCEO) :
1.95V
Collector Emitter Saturation Voltage :
1.65V
Operating Temperature :
-40°C~175°C TJ
Weight :
6.500007g
ECCN Code :
EAR99
Test Condition :
400V, 35A, 10 Ω, 15V
RoHS Status :
RoHS Compliant
Mounting Type :
Through Hole
Switching Energy :
300μJ (on), 630μJ (off)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
600V
Element Configuration :
Single
Number of Pins :
3
Max Power Dissipation :
306W
Mount :
Through Hole
Reverse Recovery Time :
50 ns
Max Collector Current :
80A
Td (on/off) @ 25°C :
40ns/105ns
Packaging :
Tube
Input Type :
Standard
Package / Case :
TO-247-3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IRGP6650D-EPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGP6650D-EPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~175°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, IRGP6650D-EPBF pinout, IRGP6650D-EPBF datasheet PDF, IRGP6650D-EPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGP6650D-EPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGP6650D-EPBF


IRGP6650D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP6650D-EPBF               Description

 

The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.



IRGP6650D-EPBF                Applications

·   Welding

·   H Bridge Converters

 

IRGP6650D-EPBF              Features


Low VCE(ON) and Switching Losses

Optimized Diode for Full Bridge Hard Switch Converters

Square RBSOA and MaximumTemperature of 175

5us Short Circuit

PositiveVCE(ON)Temperature Co-efficient

 Lead-free. RoHS compliant   

 


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