IRGP6640DPBF

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Mfr.Part #
IRGP6640DPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 53A 200W TO247AC
Stock
6,994
In Stock :
6,994

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Package / Case :
TO-247-3
Switching Energy :
300μJ (on), 840μJ (off)
Number of Pins :
3
Collector Emitter Saturation Voltage :
1.65V
Gate Charge :
50nC
Collector Emitter Breakdown Voltage :
600V
Max Power Dissipation :
200W
Reverse Recovery Time :
70 ns
Test Condition :
400V, 24A, 10 Ω, 15V
RoHS Status :
RoHS Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-40°C~175°C TJ
Length :
15.87mm
Element Configuration :
Single
Published :
2014
Input Type :
Standard
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
1.95V
Current - Collector Pulsed (Icm) :
72A
Max Collector Current :
53A
Packaging :
Tube
Mount :
Through Hole
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
20.7mm
Td (on/off) @ 25°C :
40ns/100ns
Mounting Type :
Through Hole
Power - Max :
200W
Vce(on) (Max) @ Vge, Ic :
1.95V @ 15V, 24A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Width :
5.31mm
Datasheets
IRGP6640DPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGP6640DPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Pins:3, Operating Temperature:-40°C~175°C TJ, Mounting Type:Through Hole, IRGP6640DPBF pinout, IRGP6640DPBF datasheet PDF, IRGP6640DPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGP6640DPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGP6640DPBF


IRGP6640DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP6640DPBF Description


The Infineon Technologies IRGP6640DPBF comes from the IR66xx series, the high-performance 600V ultra-fast Trench-gate Field Stop insulated-gate bipolar transistors (IGBTs). The new rugged, reliable family of devices features extremely low conduction and switching losses optimized for welding applications. 



IRGP6640DPBF Features


  • 5μs Short Circuit

  • Positive VCE (ON) Temperature Co-efficient

  • Lead-free, RoHS compliant

  • Low VCE(ON) and Switching Losses

  • Optimized Diode for Full-Bridge Hard Switch Converters

  • Square RBSOA and Maximum Temperature of 175°C



IRGP6640DPBF Applicaitons


  • H Bridge Converters

  • Welding


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