IRGP50B60PDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

370W

Turn-Off Delay Time :

140 ns

Collector Emitter Voltage (VCEO) :

600V

Mount :

Through Hole

Number of Pins :

3

Package / Case :

TO-247-3

Number of Elements :

1

Gate-Emitter Voltage-Max :

20V

Continuous Collector Current :

75A

Voltage - Rated DC :

600V

Max Collector Current :

75A

JEDEC-95 Code :

TO-247AC

Published :

2004

Td (on/off) @ 25°C :

34ns/130ns

Current Rating :

75A

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 50A

Transistor Application :

POWER CONTROL

Width :

5.3086mm

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Input Type :

Standard

Collector Emitter Breakdown Voltage :

600V

Power Dissipation :

370W

Packaging :

Bulk

Turn On Time :

59 ns

IGBT Type :

NPT

Turn On Delay Time :

33 ns

REACH SVHC :

No SVHC

Current - Collector Pulsed (Icm) :

150A

Gate-Emitter Thr Voltage-Max :

5V

Polarity/Channel Type :

N-Channel

Reverse Recovery Time :

50 ns

Weight :

38.000013g

Max Junction Temperature (Tj) :

150°C

Number of Terminations :

3

Case Connection :

COLLECTOR

Switching Energy :

360μJ (on), 380μJ (off)

Additional Feature :

HIGH RELIABILITY, LOW CONDUCTION LOSS

Gate Charge :

240nC

Mounting Type :

Through Hole

Contact Plating :

Tin

Length :

15.87mm

Factory Lead Time :

14 Weeks

Height :

24.99mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time-Max (tf) :

65ns

Element Configuration :

Single

Radiation Hardening :

No

Turn Off Time-Nom (toff) :

190 ns

Transistor Element Material :

SILICON

Test Condition :

390V, 33A, 3.3 Ω, 15V

Rise Time :

26ns

Collector Emitter Saturation Voltage :

2V