IRGP50B60PDPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Rise Time :

26ns

Mount :

Through Hole

Mounting Type :

Through Hole

Number of Elements :

1

Length :

15.87mm

Packaging :

Bulk

Voltage - Rated DC :

600V

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Max Collector Current :

75A

Max Power Dissipation :

370W

IGBT Type :

NPT

Turn Off Time-Nom (toff) :

190 ns

Height :

24.99mm

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 50A

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Contact Plating :

Tin

Current - Collector Pulsed (Icm) :

150A

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Fall Time-Max (tf) :

65ns

Published :

2004

Collector Emitter Saturation Voltage :

2V

Factory Lead Time :

14 Weeks

Power Dissipation :

370W

Additional Feature :

HIGH RELIABILITY, LOW CONDUCTION LOSS

Current Rating :

75A

Test Condition :

390V, 33A, 3.3 Ω, 15V

Collector Emitter Breakdown Voltage :

600V

Element Configuration :

Single

Gate-Emitter Voltage-Max :

20V

Switching Energy :

360μJ (on), 380μJ (off)

Transistor Application :

POWER CONTROL

Reverse Recovery Time :

50 ns

Turn On Time :

59 ns

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

5V

Turn-Off Delay Time :

140 ns

Transistor Element Material :

SILICON

Gate Charge :

240nC

Radiation Hardening :

No

Turn On Delay Time :

33 ns

Td (on/off) @ 25°C :

34ns/130ns

Weight :

38.000013g

Input Type :

Standard

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-247AC

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Width :

5.3086mm

Collector Emitter Voltage (VCEO) :

600V

Continuous Collector Current :

75A