IRGP4650D-EPBF

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Mfr.Part #
IRGP4650D-EPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 76A 268W TO247AD
Stock
28,354
In Stock :
28,354

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
600V
Radiation Hardening :
No
Power - Max :
268W
Collector Emitter Saturation Voltage :
1.9V
ECCN Code :
EAR99
Max Collector Current :
76A
Factory Lead Time :
26 Weeks
Power Dissipation :
134W
Height :
20.7mm
Gate-Emitter Voltage-Max :
20V
Td (on/off) @ 25°C :
46ns/105ns
Rise Time-Max :
42ns
Switching Energy :
390μJ (on), 632μJ (off)
Operating Temperature :
-55°C~175°C TJ
Test Condition :
400V, 35A, 10 Ω, 15V
Mount :
Through Hole
Package / Case :
TO-247-3
Published :
2004
Width :
5.31mm
Mounting Type :
Through Hole
Number of Pins :
3
Gate Charge :
104nC
Gate-Emitter Thr Voltage-Max :
6.5V
Input Type :
Standard
Vce(on) (Max) @ Vge, Ic :
1.9V @ 15V, 35A
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Max Power Dissipation :
268W
Fall Time-Max (tf) :
54ns
Current - Collector Pulsed (Icm) :
105A
Polarity/Channel Type :
N-Channel
Reverse Recovery Time :
120 ns
Collector Emitter Voltage (VCEO) :
1.9V
Length :
15.87mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IRGP4650D-EPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGP4650D-EPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:3, IRGP4650D-EPBF pinout, IRGP4650D-EPBF datasheet PDF, IRGP4650D-EPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGP4650D-EPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGP4650D-EPBF


IRGP4650D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP4650D-EPBF Description


IRGP4650D-EPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is manufactured by Infineon Technologies to provide high efficiency in wide range of applications. Due to its 5μs short circuit SOA, it is able to provide rugged transient performance for increased reliability. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. Moreover, it provides increased reliability based on the maximum junction temperature rated at 175°C.



IRGP4650D-EPBF Features


Benchmark efficiency for motor control

Rugged transient performance

Low EMI

Excellent current sharing in parallel operation

Lead-free package



IRGP4650D-EPBF Applications


Industrial motor drive

UPS

Solar inverters

Welding 


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