IRGP4640-EPBF
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- Mfr.Part #
- IRGP4640-EPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 65A 250W TO247AD
- Stock
- 48,582
- In Stock ：
- 48,582
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector Pulsed (Icm) :
- 72A
- Max Collector Current :
- 65A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 250W
- Polarity/Channel Type :
- N-Channel
- Base Part Number :
- IRGP4640
- Number of Pins :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 24A
- Fall Time-Max (tf) :
- 40ns
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Element Configuration :
- Single
- Published :
- 2013
- Td (on/off) @ 25°C :
- 40ns/105ns
- Gate-Emitter Voltage-Max :
- 20V
- Power - Max :
- 250W
- Collector Emitter Saturation Voltage :
- 1.6V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Test Condition :
- 400V, 24A, 10 Ω, 15V
- Gate Charge :
- 75nC
- Input Type :
- Standard
- Operating Temperature :
- -40°C~175°C TJ
- Collector Emitter Voltage (VCEO) :
- 1.9V
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 600V
- Mount :
- Through Hole
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Switching Energy :
- 100μJ (on), 600μJ (off)
- Datasheets
- IRGP4640-EPBF
IRGP4640-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4640-EPBF Description
The IRGP4640-EPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The name also implies the union between them. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.
IRGP4640-EPBF Features
-
tSC ≥ 5μs, TJ(max) = 175°C
-
VCE(on) typ. = 1.60V @ IC = 24A
-
VCES = 600V
-
IC = 40A, TC = 100°C
-
Low VCE(ON) and switching losses
-
Lead-Free, RoHS Compliant
IRGP4640-EPBF Applications
-
Inverters
-
UPS
-
Welding
-
Industrial Motor Drive
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