IRGP4640-EPBF
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- Mfr.Part #
- IRGP4640-EPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT
- Stock
- 22,211
- In Stock ：
- 22,211
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 65A
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 600V
- Fall Time-Max (tf) :
- 40ns
- Polarity/Channel Type :
- N-Channel
- Max Power Dissipation :
- 250W
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Base Part Number :
- IRGP4640
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 24A
- Operating Temperature :
- -40°C~175°C TJ
- Power - Max :
- 250W
- Collector Emitter Saturation Voltage :
- 1.6V
- Gate Charge :
- 75nC
- Published :
- 2013
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate-Emitter Voltage-Max :
- 20V
- Test Condition :
- 400V, 24A, 10 Ω, 15V
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Pulsed (Icm) :
- 72A
- Td (on/off) @ 25°C :
- 40ns/105ns
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 1.9V
- ECCN Code :
- EAR99
- Switching Energy :
- 100μJ (on), 600μJ (off)
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- Element Configuration :
- Single
- Datasheets
- IRGP4640-EPBF
IRGP4640-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4640-EPBF Description
The IRGP4640-EPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The name also implies the union between them. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.
IRGP4640-EPBF Features
-
tSC ≥ 5μs, TJ(max) = 175°C
-
VCE(on) typ. = 1.60V @ IC = 24A
-
VCES = 600V
-
IC = 40A, TC = 100°C
-
Low VCE(ON) and switching losses
-
Lead-Free, RoHS Compliant
IRGP4640-EPBF Applications
-
Inverters
-
UPS
-
Welding
-
Industrial Motor Drive
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