IRGP4266PBF
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- Mfr.Part #
- IRGP4266PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 650V 140A 450W TO247AC
- Stock
- 1,385
- In Stock ：
- 1,385
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 140A
- Gate Charge :
- 210nC
- Current - Collector Pulsed (Icm) :
- 300A
- Package / Case :
- TO-247-3
- Height :
- 21.1mm
- Collector Emitter Breakdown Voltage :
- 650V
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 75A
- Operating Temperature :
- -40°C~175°C TJ
- Power - Max :
- 450W
- Max Power Dissipation :
- 450W
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Gate-Emitter Thr Voltage-Max :
- 7.7V
- Length :
- 16.13mm
- Collector Emitter Saturation Voltage :
- 1.7V
- Weight :
- 38.000013g
- Rise Time-Max :
- 105ns
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Switching Energy :
- 3.2mJ (on), 1.7mJ (off)
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 14 Weeks
- Test Condition :
- 400V, 75A, 10 Ω, 15V
- Gate-Emitter Voltage-Max :
- 20V
- Width :
- 5.2mm
- Packaging :
- Tube
- Published :
- 2012
- Input Type :
- Standard
- Element Configuration :
- Single
- Td (on/off) @ 25°C :
- 80ns/200ns
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Polarity/Channel Type :
- N-Channel
- Fall Time-Max (tf) :
- 55ns
- Lead Free :
- Lead Free
- Datasheets
- IRGP4266PBF
IRGP4266PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4266PBF Description
The IRGP4266PBF is an IGBT 650 V 140 A 450 W Through Hole TO-247AC. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IRGP4266PBF Features
-
Positive VCE (ON) Temperature Coefficient
-
5.5μs short circuit SOA
-
Lead-Free, RoHS compliant
-
Low VCE(ON) and switching Losses
-
Square RBSOA and Maximum Junction Temperature 175°C
-
VCES = 650V
-
IC = 90A, TC =100°C
-
tSC≥5.5μs, TJ(max) = 175°C
-
VCE(ON) typ. = 1.7V @ IC = 75A
IRGP4266PBF Applications
-
Inverters
-
UPS
-
Welding
-
Industrial Motor Drive
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