IRGP4266D-EPBF

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Mfr.Part #
IRGP4266D-EPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT WITH RECOVERY DIODE
Stock
141
In Stock :
141

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Rise Time-Max :
90ns
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
140A
Gate-Emitter Voltage-Max :
20V
REACH SVHC :
No SVHC
Collector Emitter Breakdown Voltage :
650V
Current - Collector Pulsed (Icm) :
300A
Operating Temperature :
-40°C~175°C TJ
Packaging :
Tube
Td (on/off) @ 25°C :
50ns/200ns
Weight :
6.500007g
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 75A
Reverse Recovery Time :
170 ns
Number of Pins :
3
Gate-Emitter Thr Voltage-Max :
7.7V
Package / Case :
TO-247-3
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
Power - Max :
455W
Element Configuration :
Single
Max Power Dissipation :
455W
Input Type :
Standard
Radiation Hardening :
No
Mount :
Through Hole
Fall Time-Max (tf) :
80ns
Collector Emitter Saturation Voltage :
1.7V
Switching Energy :
2.5mJ (on), 2.2mJ (off)
ECCN Code :
EAR99
Lead Free :
Lead Free
Test Condition :
400V, 75A, 10 Ω, 15V
Gate Charge :
210nC
Factory Lead Time :
15 Weeks
Published :
2010
Collector Emitter Voltage (VCEO) :
2.1V
Datasheets
IRGP4266D-EPBF
Introducing Transistors - IGBTs - Single International Rectifier IRGP4266D-EPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~175°C TJ, Number of Pins:3, Package / Case:TO-247-3, Mounting Type:Through Hole, IRGP4266D-EPBF pinout, IRGP4266D-EPBF datasheet PDF, IRGP4266D-EPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRGP4266D-EPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRGP4266D-EPBF


IRGP4266D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP4266D-EPBF Description

 

IRGP4266D-EPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGP4266D-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGP4266D-EPBF has the common source configuration.

 

 

IRGP4266D-EPBF Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRGP4266D-EPBF Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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