IRGP4266-EPBF

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Mfr.Part #
IRGP4266-EPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 650V 140A 450W TO247AD
Stock
43,535
In Stock :
43,535

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Test Condition :
400V, 75A, 10 Ω, 15V
Number of Pins :
3
Current - Collector Pulsed (Icm) :
300A
Operating Temperature :
-40°C~175°C TJ
Polarity/Channel Type :
N-Channel
ECCN Code :
EAR99
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 75A
Gate-Emitter Voltage-Max :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
450W
Collector Emitter Voltage (VCEO) :
2.1V
Td (on/off) @ 25°C :
80ns/200ns
Collector Emitter Breakdown Voltage :
650V
Radiation Hardening :
No
Rise Time-Max :
105ns
Mounting Type :
Through Hole
Mount :
Through Hole
Gate-Emitter Thr Voltage-Max :
7.7V
Fall Time-Max (tf) :
55ns
Max Power Dissipation :
450W
Published :
2014
Max Collector Current :
140A
Element Configuration :
Single
Packaging :
Tube
Input Type :
Standard
RoHS Status :
RoHS Compliant
Gate Charge :
210nC
Switching Energy :
3.2mJ (on), 1.7mJ (off)
Factory Lead Time :
14 Weeks
Package / Case :
TO-247-3
Datasheets
IRGP4266-EPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRGP4266-EPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-40°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, IRGP4266-EPBF pinout, IRGP4266-EPBF datasheet PDF, IRGP4266-EPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGP4266-EPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGP4266-EPBF


IRGP4266-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP4266-EPBF Description


The IRGP4266-EPBF is an IGBT 650 V 140 A 450 W Through Hole TO-247AD. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.



IRGP4266-EPBF Features


  • Low VCE(ON) and switching Losses

  • 5.5μs short circuit SOA

  • Square RBSOA and Maximum Junction Temperature 175°C

  • Positive VCE (ON) Temperature Coefficient

  • Lead-Free, RoHS compliant



IRGP4266-EPBF Applications


  • UPS

  • Welding

  • Industrial Motor Drive

  • Inverters


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