IRGP4263PBF
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- Mfr.Part #
- IRGP4263PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 650V 90A 300W TO-247
- Stock
- 24,141
- In Stock ：
- 24,141
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Max Power Dissipation :
- 300W
- Operating Temperature :
- -40°C~175°C TJ
- Rise Time-Max :
- 80ns
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1.7V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Max Collector Current :
- 90A
- Input Type :
- Standard
- Mount :
- Through Hole
- Current - Collector Pulsed (Icm) :
- 192A
- Element Configuration :
- Single
- Gate Charge :
- 150nC
- Length :
- 16.13mm
- Width :
- 5.2mm
- Weight :
- 38.000013g
- Packaging :
- Tube
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 48A
- Collector Emitter Breakdown Voltage :
- 650V
- Fall Time-Max (tf) :
- 50ns
- Switching Energy :
- 1.7mJ (on), 1mJ (off)
- Height :
- 21.1mm
- Test Condition :
- 400V, 48A, 10 Ω, 15V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- Published :
- 2012
- REACH SVHC :
- No SVHC
- Gate-Emitter Voltage-Max :
- 20V
- Power - Max :
- 300W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Package / Case :
- TO-247-3
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 14 Weeks
- Gate-Emitter Thr Voltage-Max :
- 7.7V
- Td (on/off) @ 25°C :
- 70ns/140ns
- Datasheets
- IRGP4263PBF
IRGP4263PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4263PBF Description
The IRGP4263PBF is an IGBT 650 V 90 A 300 W Through Hole TO-247AC. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
IRGP4263PBF Features
-
VCES = 650V
-
IC = 60A, TC =100°C
-
tSC ≥ 5.5μs, TJ(max) = 175°C
-
VCE(ON) typ. = 1.7V @ IC = 48A
-
Low VCE(ON) and switching losses
-
Square RBSOA and maximum junction temperature 175°C
-
Positive VCE (ON) temperature coefficient
-
5.5μs short circuit SOA
-
Lead-free, RoHS compliant
IRGP4263PBF Applications
-
UPS
-
Welding
-
Industrial Motor Drive
-
Inverters
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