IRGP4263D1-EPBF
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- Mfr.Part #
- IRGP4263D1-EPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V TO247 COPAK
- Stock
- 23,560
- In Stock ：
- 23,560
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector Pulsed (Icm) :
- 192A
- Mounting Type :
- Through Hole
- Input Type :
- Standard
- Reverse Recovery Time :
- 170ns
- Gate Charge :
- 145nC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2016
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 48A
- Td (on/off) @ 25°C :
- 70ns/140ns
- Package / Case :
- TO-247-3
- Switching Energy :
- 2.9mJ (on), 1.4mJ (off)
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 90A
- Voltage - Collector Emitter Breakdown (Max) :
- 650V
- Test Condition :
- 400V, 48A, 10Ohm, 15V
- Power - Max :
- 325W
- Supplier Device Package :
- TO-247
- Operating Temperature :
- -40°C~175°C TJ
- RoHS Status :
- RoHS Compliant
- Datasheets
- IRGP4263D1-EPBF
IRGP4263D1-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4263D1-EPBF Description
IRGP4263D1-EPBF is a 650v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGP4263D1-EPBF provides high efficiency in a wide range of applications and switching frequencies and improved reliability due to rugged hard switching performance and higher power capability. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor IRGP4263D1-EPBF is in the TO-247AD package with 325W power dissipation.
IRGP4263D1-EPBF Features
Low V CE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
5.5μs short circuit SOA
Lead-free, RoHS compliant
IRGP4263D1-EPBF Applications
Industrial motor drive
UPS
Solar Inverters
Welding
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