IRGP4072DPBF
- Mfr.Part #
- IRGP4072DPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRGP4072D - IGBT WITH ULTRAFAST
- Stock
- 2,580
- In Stock :
- 2,580
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Factory Lead Time :
- 14 Weeks
- Number of Elements :
- 1
- Power Dissipation :
- 180W
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- IGBT Type :
- Trench
- Input Type :
- Standard
- Turn Off Time-Nom (toff) :
- 309 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 15.875mm
- Gate-Emitter Thr Voltage-Max :
- 5V
- Collector Emitter Voltage (VCEO) :
- 1.7V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Gate-Emitter Voltage-Max :
- 20V
- Published :
- 2007
- Height :
- 20.701mm
- Package / Case :
- TO-247-3
- Collector Emitter Saturation Voltage :
- 1.7V
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time-Max (tf) :
- 124ns
- Td (on/off) @ 25°C :
- 18ns/144ns
- Rise Time-Max :
- 50ns
- JEDEC-95 Code :
- TO-247AC
- Number of Pins :
- 3
- Max Collector Current :
- 70A
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 5.3086mm
- Vce(on) (Max) @ Vge, Ic :
- 1.7V @ 15V, 40A
- Switching Energy :
- 409μJ (on), 838μJ (off)
- Gate Charge :
- 73nC
- Reverse Recovery Time :
- 122 ns
- Collector Emitter Breakdown Voltage :
- 300V
- RoHS Status :
- RoHS Compliant
- Test Condition :
- 240V, 40A, 10 Ω, 15V
- Transistor Application :
- POWER CONTROL
- Max Power Dissipation :
- 180W
- Current - Collector Pulsed (Icm) :
- 120A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Turn On Time :
- 55 ns
- Qualification Status :
- Not Qualified
- Datasheets
- IRGP4072DPBF
IRGP4072DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4072DPBF Description
The IRGP4072DPBF IGBT from Infineon Technologies is an insulated gate bipolar transistor with an ultrafast soft recovery diode.
IRGP4072DPBF Features
100% of the parts tested for clamped inductive load
Ultra-fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 150 °C
Square RBSOA
IRGP4072DPBF Applications
Welding
Solar converters and inverters
Uninterruptible Power Supplies
Battery operated vehicles
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