IRGP4072DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Turn Off Time-Nom (toff) :

309 ns

Gate-Emitter Voltage-Max :

20V

Current - Collector Pulsed (Icm) :

120A

Gate Charge :

73nC

Height :

20.701mm

Power Dissipation :

180W

Packaging :

Tube

Reverse Recovery Time :

122 ns

Transistor Application :

POWER CONTROL

Max Collector Current :

70A

Length :

15.875mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time-Max (tf) :

124ns

Mount :

Through Hole

Max Power Dissipation :

180W

Number of Elements :

1

Mounting Type :

Through Hole

Factory Lead Time :

14 Weeks

Width :

5.3086mm

Collector Emitter Breakdown Voltage :

300V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Switching Energy :

409μJ (on), 838μJ (off)

Collector Emitter Saturation Voltage :

1.7V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 40A

Test Condition :

240V, 40A, 10 Ω, 15V

Input Type :

Standard

Turn On Time :

55 ns

JEDEC-95 Code :

TO-247AC

Collector Emitter Voltage (VCEO) :

1.7V

IGBT Type :

Trench

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Package / Case :

TO-247-3

RoHS Status :

RoHS Compliant

Rise Time-Max :

50ns

ECCN Code :

EAR99

Td (on/off) @ 25°C :

18ns/144ns

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Gate-Emitter Thr Voltage-Max :

5V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007