IRGP4069DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

1.6V

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

600V

Published :

2007

Switching Energy :

390μJ (on), 632μJ (off)

Max Collector Current :

76A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Element Configuration :

Single

Package / Case :

TO-247-3

Current - Collector Pulsed (Icm) :

105A

IGBT Type :

Trench

Gate-Emitter Voltage-Max :

20V

Input Type :

Standard

Number of Elements :

1

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

1.85V

Gate Charge :

69nC

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Td (on/off) @ 25°C :

46ns/105ns

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

JEDEC-95 Code :

TO-247AC

Case Connection :

COLLECTOR

Rise Time-Max :

42ns

Mount :

Through Hole

Test Condition :

400V, 35A, 10 Ω, 15V

Reverse Recovery Time :

120ns

Number of Pins :

3

Length :

15.87mm

Operating Temperature :

-55°C~175°C TJ

Weight :

38.000013g

Turn On Time :

78 ns

Turn On Delay Time :

43 ns

Fall Time-Max (tf) :

54ns

ECCN Code :

EAR99

Height :

20.7mm

Turn Off Time-Nom (toff) :

188 ns

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Power Dissipation :

268W

Turn-Off Delay Time :

105 ns

Vce(on) (Max) @ Vge, Ic :

1.85V @ 15V, 35A

Mounting Type :

Through Hole

Width :

5.3086mm

Gate-Emitter Thr Voltage-Max :

6.5V

Max Power Dissipation :

268W

Factory Lead Time :

16 Weeks