IRGP4069DPBF
- Mfr.Part #
- IRGP4069DPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRGP4069 - DISCRETE IGBT WITH AN
- Stock
- 43,531
- In Stock :
- 43,531
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Published :
- 2007
- Gate-Emitter Voltage-Max :
- 20V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 1.85V
- Width :
- 5.3086mm
- Turn On Time :
- 78 ns
- Input Type :
- Standard
- Length :
- 15.87mm
- Collector Emitter Breakdown Voltage :
- 600V
- Turn-Off Delay Time :
- 105 ns
- Max Power Dissipation :
- 268W
- Reverse Recovery Time :
- 120ns
- Weight :
- 38.000013g
- Factory Lead Time :
- 16 Weeks
- Case Connection :
- COLLECTOR
- Gate Charge :
- 69nC
- Lead Free :
- Lead Free
- Td (on/off) @ 25°C :
- 46ns/105ns
- Power Dissipation :
- 268W
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 43 ns
- Mount :
- Through Hole
- Fall Time-Max (tf) :
- 54ns
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Number of Elements :
- 1
- Height :
- 20.7mm
- Element Configuration :
- Single
- Max Collector Current :
- 76A
- Polarity/Channel Type :
- N-Channel
- Turn Off Time-Nom (toff) :
- 188 ns
- Number of Terminations :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 1.85V @ 15V, 35A
- Collector Emitter Saturation Voltage :
- 1.6V
- Current - Collector Pulsed (Icm) :
- 105A
- Package / Case :
- TO-247-3
- Rise Time-Max :
- 42ns
- Test Condition :
- 400V, 35A, 10 Ω, 15V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Switching Energy :
- 390μJ (on), 632μJ (off)
- REACH SVHC :
- No SVHC
- IGBT Type :
- Trench
- Transistor Application :
- POWER CONTROL
- Operating Temperature :
- -55°C~175°C TJ
- JEDEC-95 Code :
- TO-247AC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Datasheets
- IRGP4069DPBF

IRGP4069DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4069DPBF Description
IRGP4069DPBF is an insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGP4069DPBF has high efficiency in a wide range of applications. And it is suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching Losses. Rugged Transient Performance for Increased Reliability and Excellent Current Sharing in Parallel Operation are benefits for IRGP4069DPBF. The IRGP4069DPBF is offered in the TO-247AC package. It is specified for operation from –55°C to +175°C.
IRGP4069DPBF Features
-
Low VCE(on) Trench IGBT technology
-
Low switching losses
-
Maximum junction temperature 175 °C
-
5μs short circuit SOA
-
Square RBSOA
-
100% of the parts tested ILM
-
Positive VCE(on) temperature coefficient
-
Tighter distribution of parameters
IRGP4069DPBF Applications
-
Motor control and drives
-
Solutions for solar energy systems
-
Uninterruptible power supply (UPS)
-
Industrial heating
-
Industrial welding
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