IRGP4069D-EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Mount :

Through Hole

Fall Time-Max (tf) :

54ns

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

250

Gate-Emitter Voltage-Max :

20V

Power Dissipation-Max :

268W

Rise Time-Max :

42ns

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

POWER CONTROL

Element Configuration :

Single

Reverse Recovery Time :

120 ns

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

1.85V

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

JEDEC-95 Code :

TO-247AD

Power Dissipation :

268W

Collector Emitter Breakdown Voltage :

600V

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Package / Case :

TO-247-3

Collector Emitter Saturation Voltage :

1.85V

Turn Off Time-Nom (toff) :

188 ns

Gate-Emitter Thr Voltage-Max :

6.5V

Radiation Hardening :

No

Turn On Time :

78 ns

Max Operating Temperature :

175°C

Terminal Finish :

MATTE TIN OVER NICKEL

JESD-609 Code :

e3

Max Collector Current :

76A

Min Operating Temperature :

-55°C