IRGP4068D-EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Power Dissipation :

330W

Voltage - Rated DC :

600V

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

IGBT Type :

Trench

Packaging :

Bulk

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Test Condition :

400V, 48A, 10 Ω, 15V

Gate Charge :

95nC

Package / Case :

TO-247-3

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.65V

Gate-Emitter Voltage-Max :

20V

Length :

15.87mm

Current Rating :

48A

Switching Energy :

1.28mJ (off)

Transistor Application :

POWER CONTROL

Collector Emitter Voltage (VCEO) :

2.14V

Max Collector Current :

96A

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

Turn On Time :

180 ns

Turn-Off Delay Time :

145 ns

Lead Free :

Lead Free

JEDEC-95 Code :

TO-247AD

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Current - Collector Pulsed (Icm) :

144A

Mount :

Through Hole

Width :

5.13mm

Max Power Dissipation :

330W

Turn Off Time-Nom (toff) :

210 ns

Number of Elements :

1

REACH SVHC :

No SVHC

Published :

2003

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

6.5V

Height :

20.7mm

Td (on/off) @ 25°C :

-/145ns

ECCN Code :

EAR99

Vce(on) (Max) @ Vge, Ic :

2.14V @ 15V, 48A