IRGP4066D-EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

2.1V

Turn On Delay Time :

50 ns

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

600V

Gate Charge :

150nC

Weight :

6.500007g

Radiation Hardening :

No

REACH SVHC :

No SVHC

Turn-Off Delay Time :

200 ns

Test Condition :

400V, 75A, 10 Ω, 15V

Factory Lead Time :

26 Weeks

Turn Off Time-Nom (toff) :

310 ns

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Power - Max :

454W

Element Configuration :

Single

Td (on/off) @ 25°C :

50ns/200ns

Width :

5.13mm

Turn On Time :

120 ns

Contact Plating :

Tin

Length :

15.87mm

Case Connection :

COLLECTOR

Mount :

Through Hole

Collector Emitter Saturation Voltage :

1.7V

Number of Elements :

1

Height :

20.7mm

Fall Time-Max (tf) :

80ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Input Type :

Standard

Rise Time-Max :

90ns

Number of Terminations :

3

Max Collector Current :

140A

IGBT Type :

Trench

Reverse Recovery Time :

155 ns

Packaging :

Tube

Lead Free :

Lead Free

Package / Case :

TO-247-3

Switching Energy :

2.47mJ (on), 2.16mJ (off)

Max Power Dissipation :

454W

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 75A

Published :

2004

JEDEC-95 Code :

TO-247AD

Gate-Emitter Thr Voltage-Max :

6.5V

ECCN Code :

EAR99

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

225A

Number of Pins :

3

Transistor Element Material :

SILICON