IRGP4066D-EPBF
- Mfr.Part #
- IRGP4066D-EPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRGP4066 - DISCRETE IGBT WITH AN
- Stock
- 2,513
- In Stock :
- 2,513
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector Pulsed (Icm) :
- 225A
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Max Collector Current :
- 140A
- Transistor Application :
- POWER CONTROL
- Published :
- 2004
- Element Configuration :
- Single
- Gate-Emitter Voltage-Max :
- 20V
- Weight :
- 6.500007g
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Polarity/Channel Type :
- N-Channel
- Gate Charge :
- 150nC
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 75A
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- IGBT Type :
- Trench
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Test Condition :
- 400V, 75A, 10 Ω, 15V
- Width :
- 5.13mm
- Mount :
- Through Hole
- Height :
- 20.7mm
- Td (on/off) @ 25°C :
- 50ns/200ns
- Collector Emitter Saturation Voltage :
- 1.7V
- Turn On Delay Time :
- 50 ns
- Package / Case :
- TO-247-3
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Time :
- 120 ns
- Power - Max :
- 454W
- Turn Off Time-Nom (toff) :
- 310 ns
- Turn-Off Delay Time :
- 200 ns
- Radiation Hardening :
- No
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Collector Emitter Breakdown Voltage :
- 600V
- JEDEC-95 Code :
- TO-247AD
- Switching Energy :
- 2.47mJ (on), 2.16mJ (off)
- Factory Lead Time :
- 26 Weeks
- Fall Time-Max (tf) :
- 80ns
- Packaging :
- Tube
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 15.87mm
- Reverse Recovery Time :
- 155 ns
- Max Power Dissipation :
- 454W
- Rise Time-Max :
- 90ns
- Datasheets
- IRGP4066D-EPBF

IRGP4066D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4066D-EPBF Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
IRGP4066D-EPBF Features
Low VCE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (ON) Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
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