IRGP4066-EPBF
- Mfr.Part #
- IRGP4066-EPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT
- Stock
- 22,609
- In Stock :
- 22,609
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Turn On Time :
- 120 ns
- IGBT Type :
- Trench
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 600V
- ECCN Code :
- EAR99
- Gate Charge :
- 150nC
- Number of Pins :
- 3
- Packaging :
- Tube
- Switching Energy :
- 2.47mJ (on), 2.16mJ (off)
- Td (on/off) @ 25°C :
- 50ns/200ns
- Element Configuration :
- Single
- Max Collector Current :
- 140A
- JEDEC-95 Code :
- TO-247AD
- Power Dissipation :
- 454W
- Operating Temperature :
- -55°C~175°C TJ
- Test Condition :
- 400V, 75A, 10 Ω, 15V
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.7V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Width :
- 5.13mm
- Turn Off Time-Nom (toff) :
- 310 ns
- Polarity/Channel Type :
- N-Channel
- Height :
- 20.7mm
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 75A
- Number of Terminations :
- 3
- Current - Collector Pulsed (Icm) :
- 225A
- Transistor Application :
- POWER CONTROL
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Published :
- 2006
- Fall Time-Max (tf) :
- 80ns
- Input Type :
- Standard
- Rise Time-Max :
- 90ns
- Collector Emitter Voltage (VCEO) :
- 2.1V
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Max Power Dissipation :
- 454W
- Mounting Type :
- Through Hole
- Gate-Emitter Voltage-Max :
- 20V
- Package / Case :
- TO-247-3
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Length :
- 15.87mm
- Datasheets
- IRGP4066-EPBF

IRGP4066-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4066-EPBF Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IRGP4066-EPBF Features
? Low VCE (ON) Trench IGBT Technology
? Low Switching Losses
? Maximum Junction Temperature 175 °C
? 5 μS short circuit SOA
? Square RBSOA
? 100% of The Parts Tested for ILM
? Positive VCE (ON) Temperature Coefficient
? Tight Parameter Distribution
? Lead Free Package
IRGP4066-EPBF Applications
· drives
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