IRGP4065DPBF
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- Mfr.Part #
- IRGP4065DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 300V 70A 160W TO247AC
- Stock
- 27,851
- In Stock ：
- 27,851
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Package / Case :
- TO-247-3
- Published :
- 2006
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -40°C~150°C TJ
- Gate Charge :
- 62nC
- Power - Max :
- 160W
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 70A
- Current - Collector (Ic) (Max) :
- 70A
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- IGBT Type :
- Trench
- Td (on/off) @ 25°C :
- 30ns/170ns
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Type :
- Standard
- Test Condition :
- 180V, 25A, 10 Ω, 15V
- Datasheets
- IRGP4065DPBF
IRGP4065DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4065DPBF Description
The IRGP4065DPBF IGBT is made primarily for use in Plasma Display Panel applications. In order to achieve low VCE(on) and low EPULSETM rating per silicon area, this device uses advanced trench IGBT technology, which increases panel efficiency. Operating junction temperature of 150 °C and high repeated peak current capacity are further features. These characteristics work together to make this IGBT a very effective, durable, and trustworthy device for PDP applications.
IRGP4065DPBF Features
-
Lead-Free Package
-
Advanced Trench IGBT Technology
-
High Repetitive Peak Current Capability
-
Optimized for Sustain and Energy Recovery Circuits in PDP Applications
-
Low VCE(on) and Energy per Pulse (EPULSETM) for Improved Panel Efficiency
IRGP4065DPBF Applications
-
Automotive
-
Enterprise systems
-
Communications equipment
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