IRGP4063DPBF
- Mfr.Part #
- IRGP4063DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT TRENCH 600V 96A TO247AC
- Stock
- 49,649
- In Stock :
- 49,649
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Continuous Drain Current (ID) :
- 96A
- IGBT Type :
- Trench
- Turn On Delay Time :
- 60 ns
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 330W
- Input Type :
- Standard
- ECCN Code :
- EAR99
- Base Part Number :
- IRGP4063D
- Number of Pins :
- 3
- Current - Collector Pulsed (Icm) :
- 144A
- Voltage - Rated DC :
- 300V
- Number of Terminations :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 2.14V @ 15V, 48A
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 56ns
- Width :
- 5.3mm
- Operating Temperature :
- -55°C~175°C TJ
- Collector Emitter Breakdown Voltage :
- 600V
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Mount :
- Through Hole
- Length :
- 15.875mm
- Package / Case :
- TO-247-3
- Transistor Application :
- POWER CONTROL
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Fall Time-Max (tf) :
- 46ns
- Gate Charge :
- 95nC
- Turn-Off Delay Time :
- 145 ns
- Test Condition :
- 400V, 48A, 10 Ω, 15V
- JEDEC-95 Code :
- TO-247AC
- Max Power Dissipation :
- 330W
- Td (on/off) @ 25°C :
- 60ns/145ns
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Max Collector Current :
- 96A
- Factory Lead Time :
- 26 Weeks
- Collector Emitter Voltage (VCEO) :
- 2.14V
- Gate-Emitter Voltage-Max :
- 20V
- Number of Elements :
- 1
- Weight :
- 38.000013g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time :
- 100 ns
- REACH SVHC :
- No SVHC
- Switching Energy :
- 625μJ (on), 1.28mJ (off)
- Height :
- 20.3mm
- Published :
- 2006
- Current Rating :
- 96A
- Turn Off Time-Nom (toff) :
- 210 ns
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 300V
- Reverse Recovery Time :
- 115 ns
- Collector Emitter Saturation Voltage :
- 2.14V
- Datasheets
- IRGP4063DPBF

IRGP4063DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4063DPBF Description
IRGP4063DPBF is an insulated gate bipolar transistor with an ultrafast soft recovery diode, manufactured by Infineon Technologies.
IRGP4063DPBF Features
-
Square RBSOA
-
Lead-Free Package
-
Low switching losses
-
5 μS short circuit SOA
-
Tight parameter distribution
-
Ultra-fast soft Recovery Co-Pak Diode
-
Low VCE (ON) Trench IGBT Technology
-
Maximum Junction temperature 175 °C
-
Positive VCE (ON) Temperature co-efficient
-
100% of the parts tested for 4X rated current (ILM)
IRGP4063DPBF Application
-
Power control
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