IRGP4062DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Height :

20.3mm

Rise Time :

22ns

Lead Free :

Lead Free

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Factory Lead Time :

26 Weeks

Gate-Emitter Voltage-Max :

20V

Input Type :

Standard

Polarity/Channel Type :

N-Channel

IGBT Type :

Trench

Radiation Hardening :

No

Switching Energy :

115μJ (on), 600μJ (off)

RoHS Status :

ROHS3 Compliant

Vce(on) (Max) @ Vge, Ic :

1.95V @ 15V, 24A

Transistor Element Material :

SILICON

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

72A

Turn On Delay Time :

41 ns

Element Configuration :

Single

Reverse Recovery Time :

89 ns

ECCN Code :

EAR99

Package / Case :

TO-247-3

Packaging :

Bulk

Turn On Time :

64 ns

Max Power Dissipation :

250W

Power Dissipation :

250W

Width :

5.3mm

Published :

2006

Test Condition :

400V, 24A, 10 Ω, 15V

Collector Emitter Voltage (VCEO) :

1.95V

JEDEC-95 Code :

TO-247AC

Case Connection :

COLLECTOR

Number of Terminations :

3

Max Collector Current :

48A

Td (on/off) @ 25°C :

41ns/104ns

Length :

15.875mm

Turn Off Time-Nom (toff) :

164 ns

Gate-Emitter Thr Voltage-Max :

6.5V

Collector Emitter Breakdown Voltage :

600V

Gate Charge :

50nC

Mount :

Through Hole

Turn-Off Delay Time :

104 ns

Collector Emitter Saturation Voltage :

1.65V

Number of Elements :

1

Weight :

38.000013g