IRGP4055DPBF
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- Mfr.Part #
- IRGP4055DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 300V 110A 255W TO247AC
- Stock
- 19,974
- In Stock ：
- 19,974
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Input Type :
- Standard
- Max Power Dissipation :
- 255W
- Element Configuration :
- Single
- Reverse Recovery Time :
- 27 ns
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Voltage - Rated DC :
- 300V
- Operating Temperature :
- -40°C~150°C TJ
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Max Collector Current :
- 110A
- Td (on/off) @ 25°C :
- 44ns/245ns
- Gate Charge :
- 132nC
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Collector Emitter Breakdown Voltage :
- 300V
- Current Rating :
- 110A
- RoHS Status :
- RoHS Compliant
- Published :
- 2006
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 110A
- IGBT Type :
- Trench
- Package / Case :
- TO-247-3
- Number of Pins :
- 3
- Datasheets
- IRGP4055DPBF
IRGP4055DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4055DPBF Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRGP4055DPBF Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
High repetitive peak current capability
Lead-Free package
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