IRG7PH50U-EP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

2V

Switching Energy :

4.6mJ (on), 3.2mJ (off)

Max Collector Current :

140A

Polarity/Channel Type :

N-Channel

Voltage - Collector Emitter Breakdown (Max) :

1200V

RoHS Status :

RoHS Compliant

Number of Elements :

1

Mounting Type :

Through Hole

Td (on/off) @ 25°C :

35ns/430ns

Turn On Time :

75 ns

Published :

2010

Max Power Dissipation :

556W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Gate Charge :

440nC

Number of Pins :

3

Input Type :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

556W

Gate-Emitter Thr Voltage-Max :

6V

Collector Emitter Breakdown Voltage :

1.2kV

Mount :

Through Hole

Test Condition :

600V, 50A, 5 Ω, 15V

Transistor Application :

POWER CONTROL

Rise Time-Max :

60ns

Turn Off Time-Nom (toff) :

710 ns

IGBT Type :

Trench

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

150A

JEDEC-95 Code :

TO-247AD

Fall Time-Max (tf) :

65ns

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 50A

Moisture Sensitivity Level (MSL) :

Not Applicable

Qualification Status :

Not Qualified

Packaging :

Tube

Number of Terminations :

3

Element Configuration :

Single

Case Connection :

COLLECTOR