IRG7CH35UEF
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- Mfr.Part #
- IRG7CH35UEF
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT 1200V ULTRA FAST DIE
- Stock
- 32,250
- In Stock ：
- 32,250
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Supplier Device Package :
- Die
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Input Type :
- Standard
- Mount :
- Surface Mount
- Vce(on) (Max) @ Vge, Ic :
- 1.6V @ 15V, 5A
- Gate Charge :
- 85nC
- Operating Temperature :
- -40°C~175°C TJ
- Test Condition :
- 600V, 20A, 10Ohm, 15V
- Td (on/off) @ 25°C :
- 30ns/160ns
- RoHS Status :
- RoHS Compliant
- Packaging :
- Bulk
- Package / Case :
- Die
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Mounting Type :
- Surface Mount
- Datasheets
- IRG7CH35UEF
IRG7CH35UEF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG7CH35UEF Description
A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.
IRG7CH35UEF Applications
· Medium Power Drives
· UPS
· HEV Inverter
· Welding
· Induction Heating
IRG7CH35UEF Features
Low VCEIONand switchingLosses
Square RBSOA and Maximum Junction Temperature175°℃
Positive VCE oNTemperature Coefficient
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