IRG7CH11K10EF

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Mfr.Part #
IRG7CH11K10EF
Manufacturer
Infineon Technologies
Package / Case
Datasheet
Download
Description
IGBT 1200V DIE
Stock
25,569
In Stock :
25,569

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
Not Applicable
Datasheets
IRG7CH11K10EF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG7CH11K10EF from Chip IC,where excellence meets affordability. This product stands out with its IRG7CH11K10EF pinout, IRG7CH11K10EF datasheet PDF, IRG7CH11K10EF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG7CH11K10EF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG7CH11K10EF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG7CH11K10EF Description


IRG7CH11K10EF is a 1200V N-channel insulated gate bipolar transistor. Low VCE(ON) and switching losses provide high efficiency in a wide range of applications and switching frequencies. Square RBSOA and Maximum Junction Temperature 175°C makes improved reliability due to rugged hard switching performance and higher power capability. Positive VcE (ON) Temperature Coefficient provides excellent current sharing in parallel operation.



IRG7CH11K10EF Features


Low VcE(ON) and switching Losses

Square RBSOA and Maximum Junction Temperature 175°C

Positive VcE (ON) Temperature Coefficient

Collector-Emitter Voltage, Tj=25°C: 1200V

Clamped Inductive Load Current④: 200A

Gate Emitter Voltage: ±30V



IRG7CH11K10EF Applications


Medium Power Drives

UPS

HEV Inverter

Welding

Induction Heating


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