IRG7PH46UDPBF
- Mfr.Part #
- IRG7PH46UDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 40A 390W TO247AC
- Stock
- 30
- In Stock :
- 30
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Turn Off Time-Nom (toff) :
- 680 ns
- Polarity/Channel Type :
- N-Channel
- Switching Energy :
- 2.61mJ (on), 1.85mJ (off)
- Reverse Recovery Time :
- 140 ns
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 40A
- Fall Time-Max (tf) :
- 60ns
- Collector Emitter Saturation Voltage :
- 1.7V
- Width :
- 5.3086mm
- Turn On Delay Time :
- 45 ns
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 2V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Height :
- 20.7mm
- Length :
- 15.87mm
- Number of Elements :
- 1
- Transistor Application :
- POWER CONTROL
- Factory Lead Time :
- 14 Weeks
- Weight :
- 38.000013g
- Current - Collector Pulsed (Icm) :
- 160A
- Power Dissipation :
- 390W
- Turn On Time :
- 80 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-247AC
- Radiation Hardening :
- No
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 410 ns
- Max Collector Current :
- 40A
- Gate-Emitter Thr Voltage-Max :
- 6V
- Gate Charge :
- 220nC
- Test Condition :
- 600V, 40A, 10 Ω, 15V
- Input Type :
- Standard
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Td (on/off) @ 25°C :
- 45ns/410ns
- IGBT Type :
- Trench
- Published :
- 2010
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Max Power Dissipation :
- 390W
- Rise Time-Max :
- 60ns
- Package / Case :
- TO-247-3
- Datasheets
- IRG7PH46UDPBF

IRG7PH46UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG7PH46UDPBF Description
IRG7PH46UDPBF is a type of insulated gate bipolar transistor (IGBT) with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in a broad range of applications. Due to its low VCE (ON) and low switching losses, it is well suited for a wide range of switching frequencies. Moreover, it is pretty reliable for electronic designers due to its rugged transient performance.
IRG7PH46UDPBF Features
-
Low VCE (ON)
-
Low switching losses
-
Ultrafast soft recovery diode
-
Tight parameter distribution
-
Available in the TO-247AC package
IRG7PH46UDPBF Applications
-
U.P.S.
-
Welding
-
Solar inverter
-
Induction heating
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